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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER BD675A BD677A BD679A VCBO HAN INC Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature BD681 GE S Open emitter EMIC CONDITIONS OND TOR UC VALUE 45 60 80 100 45 60 UNIT V BD675A BD677A Open base BD679A VCEO V 80 100 BD681 VEBO IC ICM IB PC Tj Tstg Open collector 5 4 6 0.1 V A A A W ae ae TC=25ae 40 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD675A Collector-emitter sustaining voltage BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current IC=2A; IB=40mA SYMBOL BD675A/677A/679A/681 CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) V 80 100 2.8 V 2.5 2.5 V 2.5 VCEsat IC=1.5A; IB=30mA IC=2A ; VCE=3V IC=1.5A ; VCE=3V VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VCB=100V; IE=0 VBE(ON) Base-emitter voltage ICBO ICEO BD677A BD679A BD681 BD675A BD677A BD679A BD681 Collector cut-off current HAN INC BD681 SEM GE VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 OND IC TOR UC 0.5 0.2 mA mA VCE=100V; VBE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=1.5A ; VCE=3V 750 750 2 mA IEBO Emitter cut-off current BD675A/677A/679A hFE DC current gain 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD675A/677A/679A/681 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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